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THIN-FILM TRANSISTORS WITH SPUTTERED CDSE AS SEMICONDUCTOR

被引：8
作者：
MOERSCH, G
RAVA, P
SCHWARZ, F
PACCAGNELLA, A
机构：
[1] ELETTRORAVA SPA,I-10040 SAVONERA,ITALY
[2] UNIV TRENTO,DEPT ENGN,TRENTO,ITALY
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 02期
关键词：
D O I：
10.1109/16.19949
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：449 / 451
页数：3
相关论文
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[2]   CADMIUM SELENIDE SPUTTERED FILMS [J].
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THIN SOLID FILMS, 1977, 46 (01) :59-67
[3]   HIGH-VOLTAGE THIN-FILM TRANSISTORS MANUFACTURED WITH PHOTOLITHOGRAPHY AND WITH TA2O5 AS THE GATE OXIDE [J].
KALLFASS, T ;
LUEDER, E .
THIN SOLID FILMS, 1979, 61 (02) :259-264
[4]  
LUO FC, 1985, SID DIGEST, P286
[5]   CDSE1-XOY FILMS PREPARED BY REACTIVE PLANAR MAGNETRON SPUTTERING [J].
MANIV, S ;
WESTWOOD, WD ;
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (01) :1-6
[6]  
MOERSCH G, 1984, SID INT S, P320
[7]  
SPACHMANN J, 1987, SOC INF DISPL SID IN, P147
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