FABRICATION OF 1ST-ORDER GRATINGS FOR GAAS/ALGAAS LDS BY EB LITHOGRAPHY

被引：6

作者：

SUEHIRO, M

HIRATA, T

MAEDA, M

HOSOMATSU, H

机构：

[1] Optical Measurement Technology Development Co. Ltd., Central Research Laboratory, Musashino-shi, Tokyo, 180, 11-13

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 07期

关键词：

Dbr; Dfb; Electron beam lithography; Gaas/aigaas; Grin-sch-sqw; Ld;

D O I：

10.1143/JJAP.29.L1217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-precision first-order gratings, 110 nm pitch, for GaAs/AlGaAs LD's were successfully fabricated using EB lithography. The field stitching error of EB lithography caused by height difference between reference marks for calibration and the samples, was reduced to 5 nm by controlling the EB deflection voltage calibrated by the detection of the position of the marks on the samples. We also investigated the effect of field stitching error on lasing characteristics using measurement and calculation. We found that a 20 nm stitching error is sufficiently small for single-mode LD operation. © 1990 The Japan Society of Applied Physics.

引用

页码：L1217 / L1220

页数：4

共 6 条

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