The Kapitza Resistance Between Copper and He-3

被引:68
作者
Anderson, A. C. [1 ]
Johnson, W. L.
机构
[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
关键词
D O I
10.1007/BF00629118
中图分类号
O59 [应用物理学];
学科分类号
摘要
The Kapitza resistance R-K between copper and He-3 has been measured at low pressure in a guarded cell in the temperature range 0.05-0.5 K. An extreme sensitivity to surface damage was observed. For an annealed, electropolished surface R-K agreed within a factor of two with the acoustic mismatch theory below approximate to 0.1 K. It was also noted that R-K between copper and liquid He-3 was identical to RK between copper and an adsorbed He-3 film. The data are compared with several mechanisms proposed theoretically to account for R-K.
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页码:1 / 21
页数:21
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