REALISTIC ELECTROMIGRATION LIFETIME PROJECTION OF VLSI INTERCONNECTS

被引：16

作者：

KAWASAKI, H

LEE, C

YU, TK

机构：

[1] Advanced Products Research, Development Laboratory, Motorola, Austin, TX 78721

来源：

THIN SOLID FILMS | 1994年 / 253卷 / 1-2期

关键词：

ELECTROMIGRATION; METALLIZATION; STRESS; TUNGSTEN;

D O I：

10.1016/0040-6090(94)90375-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tungsten plug contacts/vias electromigration experiments have been performed using a variety of test structures under different stress conditions. It was found that electromigration failures, failure mechanisms of tungsten plug contacts/vias, were strongly influenced by the test structures and stress conditions. This paper discusses the effect of test structures and stress conditions on electromigration failure for realistic lifetime projection of VLSI interconnects.

引用

页码：508 / 512

页数：5