BROAD-BAND TUNABLE 2-SECTION LASER DIODE WITH EXTERNAL GRATING FEEDBACK

被引:13
作者
NOTOMI, M
MITOMI, O
YOSHIKUNI, Y
KANO, F
TOHMORI, Y
机构
[1] NTT Opto-Electronics Laboratories, Atsugi, Kanagawa 243-01
关键词
D O I
10.1109/68.47055
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 1.5 μm tunable two-section laser diode with external grating feedback has been investigated. A very broad-band (154 nm) tunable range has been achieved by means of an optimized anti-reflection (AR) coating and a large NA lens coupling between the LD and the grating. We attempted to control the internal mode by use of a two-section LD which has a phase-control section. Consequently, single-mode lasing has been realized at any desirable wavelength within the 154 nm range. © 1990 IEEE
引用
收藏
页码:85 / 87
页数:3
相关论文
共 5 条
[1]   COMBINATION LENS METHOD FOR COUPLING A LASER DIODE TO A SINGLE-MODE FIBER [J].
KAWANO, K ;
MITOMI, O ;
SARUWATARI, M .
APPLIED OPTICS, 1985, 24 (07) :984-989
[2]   PERFORMANCE-CHARACTERISTICS OF 1.5-MU-M EXTERNAL CAVITY SEMICONDUCTOR-LASERS FOR COHERENT OPTICAL COMMUNICATION [J].
OLSSON, NA ;
VANDERZIEL, JP .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (04) :510-515
[3]   LINEWIDTH BROADENING FACTOR IN SEMICONDUCTOR-LASERS - AN OVERVIEW [J].
OSINSKI, M ;
BUUS, J .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (01) :9-29
[4]   1.55-MU-M BUTT-JOINTED DISTRIBUTED BRAGG REFLECTOR LASERS GROWN ENTIRELY BY LOW-PRESSURE MOVPE [J].
TOHMORI, Y ;
OISHI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (04) :L693-L695
[5]   BISTABILITY IN GRATING TUNED EXTERNAL CAVITY SEMICONDUCTOR-LASERS [J].
ZORABEDIAN, P ;
TRUTNA, WR ;
CUTLER, LS .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (11) :1855-1860