EFFECT OF BOTTOM OXIDE ON THE INTEGRITY OF INTERPOLYSILICON ULTRATHIN ONO (OXIDE NITRIDE OXIDE) FILMS

被引：11

作者：

NAITO, Y ^{[1
]}

HIROFUJI, Y ^{[1
]}

IWASAKI, H ^{[1
]}

OKADA, H ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,KYOTO RES LAB,MINAMI KU,KYOTO 601,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 02期

关键词：

Nitrides--Thin Films - Oxides--Thin Films;

D O I：

10.1149/1.2086521

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The bottom oxide was found to play an important role on the integrity of interpolysilicon ultrathin oxide/nitride/oxide (ONO) films. Natural oxides grown on phosphorus-doped polysilicon by diffusion from POCl3 source contain defects and weak spots, which degrade the integrity of ONO films grown on these. On in situ phosphorus-doped LPCVD polysilicon, defect-free oxides can be obtained and introduce much better yield in ONO films. Dielectric strength measurement by voltage ramping method cannot separate this difference of integrity. We were able to discriminate this difference only by time dependent dielectric breakdown measurement in which negative voltage was applied to the upper polysilicon. The intrinsic wearout phenomena of ONO films, which have been observed on single-crystal silicon surfaces, and depend only on the thicknesses of bottom oxide, nitride, and top oxide, were observed also on polysilicon if the bottom oxide has grown on in situ phosphorus-doped LPCVD polysilicon. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：635 / 638

页数：4

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