ENERGY LOSS AND STRAGGLING IN SILICON BY HIGH-ENERGY ELECTRONS POSITIVE PIONS AND PROTONS

被引：21

作者：

AITKEN, DW

LAKIN, WL

ZULLIGER, HR

机构：

[1] Department of Physics, High Energy Physics Laboratory, Stanford University, Stanford

来源：

PHYSICAL REVIEW | 1969年 / 179卷 / 02期

关键词：

D O I：

10.1103/PhysRev.179.393

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The most probable energy loss and energy-loss straggling are investigated in lithium-drifted silicon for electrons, positive pions, and protons with energies 31.5-767.2 MeV. Very good agreement with theory is obtained with protons and pions. The electron spectra demonstrate effects which can be attributed to the absorption by the detector of a portion of the electron bremsstrahlung radiation. No apparent evidence for a predicted decrease in electron ionization through radiative corrections is observed. © 1969 The American Physical Society.

引用

页码：393 / +

页数：1

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