SURFACE PROCESSES DURING GROWTH OF GAAS BY MOCVD

A discussion is given of the electronic properties of the (111)Ga and (001)As-stabilized surfaces of GaAs and of the electronic nature of the gas phase species present during the growth by metalorganic chemical vapour deposition (MOCVD). The reconstruction of the (001)As-stabilized surface is taken into account, allowing only for the formation of sigma-bonds. In connection with the adsorbates attention especially is given to those situations where more or less electrons are present than the two required to form the chemical bond. As an example we have calculated the coverages on both surfaces under near equilibrium growth conditions.