NON-ALLOYED OHMIC CONTACTS TO N-GAAS BY PULSE-ELECTRON-BEAM-ANNEALED SELENIUM IMPLANTS

被引：34

作者：

MOZZI, RL

FABIAN, W

PIEKARSKI, FJ

机构：

[1] Raytheon Research Division, Waltham

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 04期

关键词：

D O I：

10.1063/1.91113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonalloyed Ohmic contacts to n-GaAs have been formed by vapor deposition of TiPtAu on pulse-electron-beam-annealed Se-implanted surfaces. Peak carrier concentrations were about 1.2×1019/cm3, yielding a specific contact resistance rc≲6×10-7 Ω cm2.

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页码：337 / 339

页数：3

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