NORMAL INCIDENCE INFRARED-ABSORPTION FROM INTERSUB-BAND TRANSITIONS IN P-TYPE GALNAS/ALLNAS QUANTUM-WELLS

被引:15
作者
KATZ, J
ZHANG, Y
WANG, WI
机构
[1] Department of Electrical Engineering, Columbia University, New York
关键词
SEMICONDUCTOR MATERIALS; QUANTUM OPTICS; LOSSES;
D O I
10.1049/el:19920590
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Infra-red intersub-band absorption measurements were performed on p-type Ga0.47In0.53As/Al0.48In0.52As multiquantum wells using normally incident radiation. Several strong intersub-band absorption peaks were observed in the wavelength range 6-12-mu-m. The transition from the impurity bound state to the extended state was observed for the first time.
引用
收藏
页码:932 / 934
页数:3
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