HIGH-EFFICIENCY SILICON SOLAR-CELLS BY RAPID THERMAL-PROCESSING

被引：38

作者：

ROHATGI, A ^{[1
]}

CHEN, Z ^{[1
]}

DOSHI, P ^{[1
]}

PHAM, T ^{[1
]}

RUBY, D ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 16期

关键词：

D O I：

10.1063/1.112801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon solar cell efficiencies of 16.9% have been achieved on 0.2 OMEGA cm float zone silicon, using a simplified cost effective rapid thermal process (RTP). Although the individual processing steps are not fully optimized yet, this represents the highest reported efficiency for solar cells processed with simultaneous front and back diffusion with no conventional high-temperature furnace steps. A diffusion temperature schedule coupled with an added short in situ slow cooling during RTP resulted in greater than 200 mum diffusion length and appropriate diffusion profiles for high efficiency cells. Plasma enhanced chemical vapor deposition (PECVD) of SiN/SiO2 was used for surface passivation and antireflection coating. Conventional cells fabricated by furnace diffusions and oxidations gave an efficiency of 18.8%. Process optimization can further reduce the gap between the conventional and RTP/PECVD cells. (C) 1994 American Institute of Physics.

引用

页码：2087 / 2089

页数：3

共 7 条

[1] SIMULTANEOUS JUNCTION FORMATION USING A DIRECTED ENERGY LIGHT-SOURCE
CAMPBELL, RB
MEIER, DL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (10) : 2210 - 2211
[2] A NOVEL AND EFFECTIVE PECVD SIO2/SIN ANTIREFLECTION COATING FOR SI SOLAR-CELLS
CHEN, ZZ
SANA, P
SALAMI, J
ROHATGI, A
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (06) : 1161 - 1165
[3] HARTITI B, 1992, 11TH P EC PHOT SOL E, P420
[4] HARTITI B, 1994, 23RD P IEEE PHOT SPE, P224
[5] JOLY JF, 1986, 18TH P IEEE PHOT SPE, P1756
[6] ROHATGI A, 1983, ASTM STP, V804, P389
[7] SCHINDLER R, 1994, 23RD P IEEE PHOT SPE, P162

← 1 →