LARGE TRANSCONDUCTANCES OBSERVED IN AN INDEPENDENTLY CONTACTED COUPLED DOUBLE-QUANTUM-WELL

被引:19
作者
PATEL, NK [1 ]
LINFIELD, EH [1 ]
BROWN, KM [1 ]
GRIMSHAW, MP [1 ]
RITCHIE, DA [1 ]
JONES, GAC [1 ]
PEPPER, M [1 ]
机构
[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND
关键词
D O I
10.1063/1.111390
中图分类号
O59 [应用物理学];
学科分类号
摘要
Lateral transport in a coupled double quantum well has been studied in a system where each layer can be measured independently. Front and back gates were used to vary the carrier densities in the two wells and hence control the degree of electron coupling. When the carrier densities in the two 2DEGs were matched, the coupling was found to be strongest and resulted in a decrease in the resistance of the measured 2DEG. By using a structure with a low mobility 2DEG in parallel with a high mobility one, we demonstrate a device that displays large resistance changes and a correspondingly high transconductance.
引用
收藏
页码:3018 / 3020
页数:3
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