LOW DISLOCATION DENSITY GASB SINGLE-CRYSTALS GROWN BY LEC TECHNIQUE

[1] ANISOTROPIC SEGREGATION IN INSB [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) : 258 - 261

[2] SOME DEFECTS IN CRYSTALS GROWN FROM THE MELT .1. DEFECTS CAUSED BY THERMAL STRESSES [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1956, 235 (1200) : 37 - +

[3] GOODMAN CHL, 1978, SOLID STATE ELECTRON, V2, P129

[4] STACKING-FAULT ENERGY AND IONICITY OF CUBIC-III-V COMPOUNDS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (01): : 207 - 217

[5] KANO H, 1979, JAPAN J APPL PHYS, V18, P183

[6] A NOVEL ENCAPSULANT MATERIAL FOR LEC GROWTH OF GASB [J]. JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) : 670 - 674

[7] LIQUID-PHASE EPITAXIAL-GROWTH OF INGAASSB ON (111)B INAS [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 36 (02) : 198 - 204

[8] WELFSON RG, 1967, MATER RES B, V2, P263

[1] ANISOTROPIC SEGREGATION IN INSB [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) : 258 - 261

[2] SOME DEFECTS IN CRYSTALS GROWN FROM THE MELT .1. DEFECTS CAUSED BY THERMAL STRESSES [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1956, 235 (1200) : 37 - +

[3] GOODMAN CHL, 1978, SOLID STATE ELECTRON, V2, P129

[4] STACKING-FAULT ENERGY AND IONICITY OF CUBIC-III-V COMPOUNDS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (01): : 207 - 217

[5] KANO H, 1979, JAPAN J APPL PHYS, V18, P183

[6] A NOVEL ENCAPSULANT MATERIAL FOR LEC GROWTH OF GASB [J]. JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) : 670 - 674

[7] LIQUID-PHASE EPITAXIAL-GROWTH OF INGAASSB ON (111)B INAS [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 36 (02) : 198 - 204

[8] WELFSON RG, 1967, MATER RES B, V2, P263