LUMINESCENCE AND BANDGAP STUDIES OF HIGH-PURITY MGXZN1-XTE TERNARY ALLOYS

被引：13

作者：

MARINE, J

DOUVILLE, TT

SCHAUB, B

LAUGIER, A

BARBIER, D

GUILLAUME, JC

ROMMELUERE, JF

CHEVALLIER, J

机构：

[1] CNRS,F-92190 BELLEVUE,FRANCE

[2] INST NATL SCI APPL,F-69621 VILLEURBANNE,FRANCE

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1978年 / 7卷 / 01期

关键词：

D O I：

10.1007/BF02656017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：17 / 30

页数：14

共 15 条

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[9] PREPARATION AND PROPERTIES OF MGXZN1-XTE [J].

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