ZERO BIAS ANOMALIES PRODUCED BY CONTROLLED AMOUNTS OF CR IN A1-I-A1 TUNNEL JUNCTIONS

被引：17

作者：

NIELSEN, P

机构：

[1] The James Franck Institute, Department of Physics, The University of Chicago, Chicago

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 19期

关键词：

D O I：

10.1016/0038-1098(69)90317-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Zero to 5Å of Cr have been deposited in the barriers of Al-I-Al tunnel junctions. One angstrom of Cr metal produces a 10 per cent conductance peak which does not have the voltage-temperature dependence of the Appelbaum theory and is absent when the metal is oxidized. Thicker layers of oxidized Cr produce a large conductance dip. © 1969.

引用

页码：1429 / &

共 9 条

[1] EXCHANGE MODEL OF ZERO-BIAS TUNNELING ANOMALIES
APPELBAUM, JA
[J]. PHYSICAL REVIEW, 1967, 154 (03): : 633 - +
[2] SUPERCONDUCTIVITY OF SMALL TIN PARTICLES MEASURED BY TUNNELING
GIAEVER, I
ZELLER, HR
[J]. PHYSICAL REVIEW LETTERS, 1968, 20 (26) : 1504 - &
[3] AN IMPURITY-CONCENTRATION DEPENDENT ZERO BIAS TUNNELLING ANOMALY
MEZEI, F
[J]. PHYSICS LETTERS A, 1967, A 25 (07) : 534 - &
[4] THE FORMATION OF METAL OXIDE FILMS USING GASEOUS AND SOLID ELECTROLYTES
MILES, JL
SMITH, PH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) : 1240 - 1245
[5] NIELSEN P, TO BE PUBLISHED
[6] POLLACK SR, PRIVATE COMMUNICATIO
[7] VERWENDUNG VON SCHWINGQUARZEN ZUR WAGUNG DUNNER SCHICHTEN UND ZUR MIKROWAGUNG
SAUERBREY, G
[J]. ZEITSCHRIFT FUR PHYSIK, 1959, 155 (02): : 206 - 222
[8] ZERO-BIAS TUNNELING ANOMALIES - TEMPERATURE VOLTAGE AND MAGNETIC FIELD DEPENDENCE
SHEN, LYL
ROWELL, JM
[J]. PHYSICAL REVIEW, 1968, 165 (02): : 566 - &
[9] ANOMALOUS DENSITIES OF STATES IN NORMAL TANTALUM + NIOBIUM
WYATT, AFG
[J]. PHYSICAL REVIEW LETTERS, 1964, 13 (13) : 401 - &

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