EFFECTS OF FIXED CHARGES IN OXIDE OF THERMALLY OXIDIZED MIS SOLAR-CELLS

The open-circuit voltage V//o//. //c//. of m. i. s. cells has been reported and has been observed from our own experiments to be in the range of 400-525 mV for Al-SiO//2-p-Si cells and in the range of 220-400 mV for Au-SiO//2-n-Si cells. This is in contrast to the reported values of barrier heights for Schottky diodes without an insulating layer. The difference in V//o//c is due to the change in the effective barrier height phi //m//S. The change in phi //m//S is assumed to be due to fixed positive charges in the thin oxide, and from the reported values of phi //m//S the charge density in the oxide Q//s//s/////q has been calculated to be about 5 multiplied by 10**1**2 cm** minus **2.