POSITRON TRAPPING AT VACANCIES IN ELECTRON-IRRADIATED SI AT LOW-TEMPERATURES

被引：112

作者：

MAKINEN, J ^{[1
]}

CORBEL, C ^{[1
]}

HAUTOJARVI, P ^{[1
]}

MOSER, P ^{[1
]}

PIERRE, F ^{[1
]}

机构：

[1] CEN,DEPT RECH FONDAMENTALE,SERV PHYS,F-38041 GRENOBLE,FRANCE

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.39.10162

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10162 / 10173

页数：12

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