ELECTRICAL CHARACTERIZATION OF INXGA1-XAS/AL0.4GA0.6AS/GAAS PSEUDOMORPHIC SEMICONDUCTOR INSULATOR SEMICONDUCTOR HETEROSTRUCTURES

被引：1

作者：

COLLOT, P

BARBIER, E

SCHMIDT, PE

ARNODO, C

GAONACH, C

FAVRE, J

机构：

[1] Thomson-CSF, Central Research Laboratory, 91404 Orsay, Cedex

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 04期

关键词：

D O I：

10.1063/1.104636

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two pseudomorphic In(x)Ga1-xAs/Al0.4Ga0.6As/GaAs semiconductor/insulator/semiconductor heterostructures (PM-SIS) with indium mole fractions x = 0.15 and 0.25 were investigated and compared to a conventional GaAs/AlGaAs/GaAs SIS structure by means of current-temperature and capacitance-voltage characterizations. High reduction in gate leakage current is observed in the pseudomorphic structures compared with the conventional one. The conventional SISs is normally off, while the PM-SISs are normally on with a sheet carrier density at 0 V of 1.8X10(11) cm-2 and 2.2X10(11) cm-2 with x = 0.15 and 0.25, respectively.

引用

页码：367 / 369

页数：3

共 7 条

[1] BAND EDGE OFFSETS IN STRAINED (INGA)AS-(ALGA)AS HETEROSTRUCTURES [J].