HIGH-INTENSITY VACUUM ULTRAVIOLET-LIGHT SOURCE IN WINDOWLESS PHOTOCHEMICAL VAPOR-DEPOSITION REACTOR AND ITS APPLICATION TO A-SIH DEPOSITION

被引：14

作者：

KUROIWA, K ^{[1
]}

YAMAZAKI, H ^{[1
]}

TSUCHIYA, S ^{[1
]}

KAMISAKO, K ^{[1
]}

TARUI, Y ^{[1
]}

机构：

[1] NIPPON SANSO CORP,TECH LAB,KAWASAKI,KANAGAWA 210,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 4B期

关键词：

PHOTO-CVD; VACUUM ULTRAVIOLET LIGHT; HYDROGEN; HELIUM; HYDROGENATED AMORPHOUS SILICON;

D O I：

10.1143/JJAP.31.L518

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical emission characteristics of vacuum ultraviolet light which is effective in decomposing source gases used for deposition of hydrogenated amorphous silicon were investigated. The emission line from H atoms at 121.5 nm corresponds to the absorption peak of source gases of silicon hydrides. This emission line intensity increases markedly by mixing hydrogen with helium from 5 to 10% in concentration. The deposition rate of hydrogenated amorphous silicon films by windowless photochemical vapor deposition using this strong emission line at 121.5 nm is proportional to the emission intensity, which reaches as high as 270 angstrom/min.

引用

页码：L518 / L520

页数：3