TEMPERATURE-DEPENDENCE OF COMPOSITIONAL DISORDERING OF GAAS-ALAS SUPERLATTICES DURING MEV KR IRRADIATION

被引：7

作者：

BRYAN, RP ^{[1
]}

MILLER, LM ^{[1
]}

COCKERILL, TM ^{[1
]}

COLEMAN, JJ ^{[1
]}

KLATT, JL ^{[1
]}

AVERBACK, RS ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.41.3889

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of the specimen temperature during MeV Kr irradiation on the extent of compositional disordering in GaAs-AlAs superlattices has been determined. For low-temperature irradiations (133233 K), complete intermixing of the superlattice is observed. However, the mixing efficiency decreases with increasing specimen temperature between room temperature and 523 K. These results suggest the existence of a miscibility gap in the coherent-phase diagram of GaAs-AlAs superlattices with a critical temperature greater than 523 K. © 1990 The American Physical Society.

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页码：3889 / 3892

页数：4

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