HIGH-DENSITY LUMINESCENCE AND EXCITATION SPECTROSCOPY OF MBE-GROWN ZNSE/GAAS EPILAYERS

被引：18

作者：

KUDLEK, G ^{[1
]}

PRESSER, N ^{[1
]}

GUTOWSKI, J ^{[1
]}

DURBIN, S ^{[1
]}

MENKE, D ^{[1
]}

KOBAYASHI, M ^{[1
]}

GUNSHOR, RL ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)91055-U

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

MBE-grown ZnSe epilayers on (100) GaAs substrates are optically investigated under moderate to high excitation densities. Below the light-hole and heavy-hole exciton lines Xlh and Xhh, two lines I2 and I'2 are dominant in the luminescence spectra which are related to transitions from a neutral-donor-exciton complex (D0, X). For the first time, comparative excitation spectroscopy and magnetooptics of bound excitons in ZnSe epilayers allowed to determine their term structure, g-values and diamagnetic shifts. In the excitation spectra of the I2 line, a set of resonances located 1.2 meV to 2.9 meV on its high-energy side can be interpreted as specific transitions into excited states of the neutral-donor-exciton complex. For excitation densities until 50 kW/cm2, high-excitation bands appear, superimposing the exciton luminescence. They are discussed to be due to exciton-exciton collision processes and can be compared with high-density transitions known from bulk ZnSe crystals. © 1989.

引用

页码：667 / 672

页数：6

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