THE ORIENTATION INDEPENDENCE OF THE CDTE-HGTE VALENCE BAND OFFSET AS DETERMINED BY X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：14

作者：

BECKER, CR

WU, YS

WAAG, A

KRAUS, MM

LANDWEHR, G

机构：

[1] Physikalisches Inst., Wurzburg Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 12C期

关键词：

D O I：

10.1088/0268-1242/6/12C/014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the valence band offset (DELTA-E(V)) of the CdTe-HgTe heterojunction for three orientations, (100), (110) and (111)B, using in situ x-ray photoelectron spectroscopy. The difference in energy between the Cd 4d and Hg 5d5/2 core levels, DELTA-E(CL), and consequently DELTA-E(V), was found to be independent of surface orientation and the surface structure immediately prior to growth of the uppermost layer. DELTA-E(V) was found to be 0.37 +/- 0.07 eV.

引用

页码：C76 / C79

页数：4

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