DECHANNELING BY DISLOCATIONS IN ION-IMPLANTED SI

被引：5

作者：

GRUSKA, B

GOTZ, G

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1982年 / 59卷 / 3-4期

关键词：

Compendex;

D O I：

10.1080/00337578208237498

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

SILICON AND ALLOYS

引用

页码：157 / 167

页数：11

共 19 条

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[2] QUANTITATIVE DEPTH DISTRIBUTION OF DISLOCATIONS BY PLANAR CHANNELING [J].

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[5]

EISEN FH, 1973, CHANNELING, pCH14

[6]

FRIEDEL J, 1956, DISLOCATIONS

[7]

GOTZ G, 1978, ION BEAM MODIFICATIO, P1151

[8] DECHANNELLING OF FAST IONS IN DISTORTED CRYSTALS .1. DISLOCATIONS [J].

KUDO, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1976, 40 (06) :1645-1653

[9] ENERGY-DEPENDENCE OF DECHANNELING BY A DISLOCATION LOOP [J].

KUDO, H .

PHYSICAL REVIEW B, 1978, 18 (11) :5995-5999

[10]

LINDHARD J, 1965, MAT FYS MEDD DAN VID, V36, P7

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