PHOTO-LUMINESCENCE STUDIES OF DEEP TRAPS IN GAP-NI

被引：13

作者：

HAYES, W ^{[1
]}

RYAN, JF ^{[1
]}

WEST, CL ^{[1
]}

DEAN, PJ ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1979年 / 12卷 / 21期

关键词：

D O I：

10.1088/0022-3719/12/21/002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Transition metal impurities act as deep trapping centres in III-V and II-VI compounds and give rise to near-infrared absorption and luminescence. In many cases the charge state of the ion participating in these optical transitions is either unknown or the subject of some controversy. Luminescence studies of GaP:Ni are described. Measurements of polarised spectra under application of uniaxial stress support the assignment of the charge state Ni+ (d9).

引用

页码：L815 / L820

页数：6

共 8 条

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