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EFFECT OF ION-BOMBARDMENT AND BIAS FIELDING FOR [NI81FE19/CU] MULTILAYERS WITH GIANT MAGNETORESISTANCE DEPOSITED BY DUAL-ION BEAM SPUTTERING
被引:1
作者:
MIYAMOTO, Y
YOSHITANI, T
NAKAGAWA, S
NAOE, M
机构:
[1] Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152
关键词:
D O I:
10.1109/20.489875
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Ni-Fe/Cu multilayers with giant magnetoresistance (GMR) were deposited by dual ion beam sputtering method. Simultaneous ion bombardment during the film deposition changed the crystallite orientation in GMR multilayers. The specimen films with ion-bombarded GMR multilayer and unbombarded Fe buffer layer exhibited larger MR ratio and higher field sensitivity Delta MR/Delta H. The films deposited under ion bombardment and bias fielding revealed dominant (100) orientation, and these (100)-oriented films seems to possess relatively better GMR characteristics.
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页码:4103 / 4105
页数:3
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