VARIATIONS IN STOICHIOMETRY IN HG1-XCDXTE USING ELECTROLYTE ELECTROREFLECTANCE - TOPOGRAPHICAL INVESTIGATION

被引:8
作者
VANIER, PE [1 ]
POLLAK, FH [1 ]
RACCAH, PM [1 ]
机构
[1] YESHIVA UNIV,BELFER GRAD SCH SCI,DEPT PHYS,NEW YORK,NY 10033
来源
APPLIED OPTICS | 1977年 / 16卷 / 11期
关键词
D O I
10.1364/AO.16.002858
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:2858 / 2860
页数:3
相关论文
共 3 条
  • [1] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE
    CARDONA, M
    SHAKLEE, KL
    POLLAK, FH
    [J]. PHYSICAL REVIEW, 1967, 154 (03): : 696 - +
  • [2] Cardona M., 1969, SOLID STATE PHYS S11
  • [3] ELECTROREFLECTANCE STUDY OF CDXHG1-XTE
    MORITANI, A
    TANIGUCHI, K
    HAMAGUCHI, C
    NAKAI, J
    [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1973, 34 (01) : 79 - 88