NONLINEAR CHARGE CONTROL IN ALGAAS GAAS MODULATION-DOPED FETS

被引：29

作者：

HUGHES, WA ^{[1
]}

SNOWDEN, CM ^{[1
]}

机构：

[1] UNIV LEEDS,MICROWAVE SOLID STATE GRP,LEEDS LS2 9JT,W YORKSHIRE,ENGLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 08期

关键词：

D O I：

10.1109/T-ED.1987.23129

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1617 / 1625

页数：9

共 24 条

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[9] CHARGE CONTROL AND GEOMETRIC MAGNETORESISTANCE OF A GATED ALGAAS GAAS HETEROJUNCTION TRANSISTOR [J].

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