ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF SILICON RIBBONS PRODUCED THROUGH CAPILLARY ACTION SHAPING

被引：9

作者：

SCHWUTTKE, GH

YANG, K

CISZEK, TF

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1978年 / 43卷 / 03期

关键词：

D O I：

10.1016/0022-0248(78)90390-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：329 / 335

页数：7

共 15 条

[1]

BOATMAN JC, 1967, ELECTROCHEM TECHNOL, V5, P98

[2] EDGE-DEFINED, FILM-FED GROWTH (EFG) OF SILICON RIBBONS [J].

CISZEK, TF .

MATERIALS RESEARCH BULLETIN, 1972, 7 (08) :731-&

[3] GROWTH AND CHARACTERIZATION OF SILICON RIBBONS PRODUCED BY A CAPILLARY ACTION SHAPING TECHNIQUE [J].

CISZEK, TF ;

SCHWUTTKE, GH .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1975, 27 (01) :231-241

[4]

DERMATIS SN, 1963, IEEE T COMMUN ELECTR, V82, P94

[5]

FAHRNER W, 1976, J ELECTROCHEM SOC, V120, P100

[6]

KRESSEL H, 1974, APPL PHYS LETT, V35, P197

[7] GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .2. EDGE-DEFINED, FILM-FED GROWTH (EFG) [J].

LABELLE, HE .

MATERIALS RESEARCH BULLETIN, 1971, 6 (07) :581-&

[8] MICROSCOPY OF INTERNAL CRYSTAL IMPERFECTIONS IN SI P-N JUNCTION DIODES BY USE OF ELECTRON BEAMS [J].

LANDER, JJ ;

SCHREIBER, H ;

BUCK, TM ;

MATHEWS, JR .

APPLIED PHYSICS LETTERS, 1963, 3 (11) :206-207

[9] ZUR ABHANGIGKEIT DER LEBENSDAUER VON DER VERSETZUNGSDICHTE BEI TIEGELFREIEN SILIZIUM-EINKRISTALLEN [J].

LEMKE, H .

PHYSICA STATUS SOLIDI, 1965, 12 (01) :125-&

[10]

RAO CVH, 1974, J APPL PHYS, V47, P2614

← 1 2 →