SILICON FILMS ON SAPPHIRE

被引：36

作者：

CRISTOLOVEANU, S

机构：

来源：

REPORTS ON PROGRESS IN PHYSICS | 1987年 / 50卷 / 03期

关键词：

D O I：

10.1088/0034-4885/50/3/002

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：327 / 371

页数：45

共 212 条

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SMITH, RT ;

CORBOY, JF ;

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[3]

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[7] GROWTH OF THIN SILICON FILMS ON SAPPHIRE AND SPINEL BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :741-743

[8]

BEST DW, 1984, IEEE SOS SOI TECHNOL

[9] EPITAXY OF SILICON ON ALUMINA-STRUCTURAL EFFECTS [J].

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[10]

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