PROPERTIES OF INSB(1-X)BI(X) ALLOYS .I. ELECTRICAL MEASUREMENTS

[1] ELECTRON SCATTERING IN INSB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (02) : 131 - 149

[2] TRANSPORT OF ELECTRONS IN INTRINSIC INSB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (02) : 129 - 148

[3] TEMPERATURE DEPENDENCE OF THE ENERGY GAP IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1951, 82 (06): : 900 - 905

[4] Hilsum C., 1961, SEMICONDUCTING 3 5 C

[5] PROPERTIES OF INSB(1-X)BI(X) ALLOYS .2. OPTICAL ABSORPTION [J]. PHYSICA STATUS SOLIDI, 1969, 34 (01): : 341 - +

[6] JEANLOUIS AM, 1968 P INT C SEM MOS, P1208

[7] BAND STRUCTURE OF INDIUM ANTIMONIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 249 - 261

[8] MADELUNG O, 1964, PHYSICS 3 5 COMPOUND

[9] SMITH SD, 1962 P INT C SEM EX, P301

[10] STRAUSS AJ, 1962 P INT C SEM EX, P703

[1] ELECTRON SCATTERING IN INSB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (02) : 131 - 149

[2] TRANSPORT OF ELECTRONS IN INTRINSIC INSB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (02) : 129 - 148

[3] TEMPERATURE DEPENDENCE OF THE ENERGY GAP IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1951, 82 (06): : 900 - 905

[4] Hilsum C., 1961, SEMICONDUCTING 3 5 C

[5] PROPERTIES OF INSB(1-X)BI(X) ALLOYS .2. OPTICAL ABSORPTION [J]. PHYSICA STATUS SOLIDI, 1969, 34 (01): : 341 - +

[6] JEANLOUIS AM, 1968 P INT C SEM MOS, P1208

[7] BAND STRUCTURE OF INDIUM ANTIMONIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 249 - 261

[8] MADELUNG O, 1964, PHYSICS 3 5 COMPOUND

[9] SMITH SD, 1962 P INT C SEM EX, P301

[10] STRAUSS AJ, 1962 P INT C SEM EX, P703