ON THE ABSENCE OF PHOTODARKENING IN PNICTIDE AMORPHOUS-SEMICONDUCTORS

被引：29

作者：

MYTILINEOU, E

TAYLOR, PC

DAVIS, EA

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

SOLID STATE COMMUNICATIONS | 1980年 / 35卷 / 06期

关键词：

D O I：

10.1016/0038-1098(80)90256-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：497 / 499

页数：3

共 18 条

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[3]

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[8] LOW-TEMPERATURE THERMAL-PROPERTIES OF AMORPHOUS ARSENIC [J].

JONES, DP ;

THOMAS, N ;

PHILLIPS, WA .

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[9] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].

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[10] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].

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STREET, RA .

PHILOSOPHICAL MAGAZINE, 1975, 32 (05) :961-996

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