ELECTRON-MOBILITY LIMITED BY IONIZED IMPURITY SCATTERING WITH NON-LINEAR SCREENING IN SEMICONDUCTORS

被引：9

作者：

CHATTOPADHYAY, D

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.23.1847

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：1847 / 1850

页数：4

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