NONEQUILIBRIUM IMPURITY DIFFUSION IN SILICON

被引:10
作者
BAGRAEV, NT
KLYACHKIN, LE
SUKHANOV, VL
机构
[1] A.F. Ioffe Physico-Tech. Inst., Leningrad
关键词
D O I
10.1088/0268-1242/6/7/002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Non-equilibrium impurity diffusion of dopants has been realized in monocrystalline silicon through controlled surface injection of self-interstitials and vacancies. By varying the parameters of the surface oxide layer during the boron/phosphorus diffusion process, it was possible to obtain, for the first time, quantum-size diffusion profiles and p-n junctions with dimensions that could be controlled over the 10-220 angstrom range.
引用
收藏
页码:577 / 581
页数:5
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