DETERMINING BAND OFFSETS WITH TRIPLE QUANTUM-WELL STRUCTURES

被引：11

作者：

BRYANT, GW

BRADSHAW, JL

LEAVITT, RP

TOBIN, MS

PHAM, JT

机构：

[1] Microphotonic Devices Branch, U. S. Army Research Laboratory, Adelphi

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 10期

关键词：

D O I：

10.1063/1.109676

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Coupled triple quantum-well GaAs/AlGaAs heterostructures have been designed to exhibit simultaneous electron and hole tunneling from the central well to opposite side wells at a fixed applied bias. Band offset is the critical parameter for the design of structures with simultaneous resonances. Photocurrent measurements reveal which triple quantum-well structures exhibit simultaneous resonances. A band offset ratio near 62:38 is required to correctly engineer structures with simultaneous resonances.

引用

页码：1357 / 1359

页数：3

共 15 条

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