INFLUENCE OF ADSORPTION AND STEP RECONSTRUCTION ON THE GROWTH AND ETCHING VECTORS OF SILICON (111)

被引:37
作者
VANENCKEVORT, WJP
GILING, LJ
机构
关键词
D O I
10.1016/0022-0248(78)90419-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:90 / 96
页数:7
相关论文
共 33 条
[1]   SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J].
ABBINK, HC ;
BROUDY, RM ;
MCCARTHY, GP .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4673-&
[2]   ETCHING GE WITH MIXTURES OF HF-H2O2-H2O [J].
BLOEM, J ;
VANVESSEM, JC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (01) :33-36
[3]  
BLOEM J, 1977, CURRENT TOPICS MATER, V1
[4]   A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES [J].
BOOKER, GR ;
JOYCE, BA .
PHILOSOPHICAL MAGAZINE, 1966, 14 (128) :301-&
[5]   GROWTH OF EPITAXIAL SILICON LAYERS BY VACUUM EVAPORATION .2. INITIAL NUCLEATION AND GROWTH [J].
BOOKER, GR ;
UNVALA, BA .
PHILOSOPHICAL MAGAZINE, 1965, 11 (109) :11-&
[6]  
Chernov A. A., 1976, Soviet Physics - Doklady, V21, P300
[7]   THEORETICAL-ANALYSIS OF EQUILIBRIUM ADSORPTION LAYERS IN CVD SYSTEMS (SI-H-CL, GA-AS-H-CL) [J].
CHERNOV, AA ;
RUSAIKIN, MP .
JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :73-81
[9]   ETCHING OF DIAMOND SURFACES WITH GASES [J].
EVANS, T ;
SAUTER, DH .
PHILOSOPHICAL MAGAZINE, 1961, 6 (63) :429-&
[10]  
FARNSWORTH HE, 1960, SOLID STATE PHYSICS, V1, P602