OPTICAL INVESTIGATION OF FERMI-EDGE SINGULARITIES IN AL0.35GA0.65AS/GAAS HETEROSTRUCTURES

被引：17

作者：

ZHAO, QX ^{[1
]}

HOLTZ, PO ^{[1
]}

MONEMAR, B ^{[1
]}

SORMAN, E ^{[1
]}

CHEN, WM ^{[1
]}

HALLIN, C ^{[1
]}

SUNDARAM, M ^{[1
]}

MERZ, JL ^{[1
]}

GOSSARD, AC ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECTR STRUCT,SANTA BARBARA,CA 93106

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.46.4352

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Many-body effects of two-dimensional electrons in n-type modulation-doped AlxGa1-xAs/GaAs heterostructures have been studied by photoluminescence (PL), PL excitation (PLE) spectroscopy, and optically detected cyclotron resonance (ODCR). A Fermi-edge singularity (FES) is observed both in PL and PLE spectra when a gate voltage is applied. Strong enhancements occur for electrons at the Fermi edge (E(F)) recombining both with holes bound at acceptors and holes at the GaAs valence-band edge. These assignments are supported by the spectral behavior of the ODCR signals. Our results show that the FES in optical spectra due to holes in the GaAs valence band is correlated in strength with the FES corresponding to holes bound at acceptors. The strong Fermi-edge enhancement in optical spectra in our structures is due to the presence of an unoccupied adjacent second electron subband near the Fermi edge.

引用

页码：4352 / 4355

页数：4

共 19 条

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