ENHANCED 2-DIMENSIONAL GROWTH OF GAAS ON INP BY MOLECULAR-BEAM EPITAXY WITH ATOMIC-HYDROGEN IRRADIATION

被引：22

作者：

CHUN, YJ

OKADA, Y

KAWABE, M

机构：

[1] Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 8A期

关键词：

LATTICE-MISMATCHED EPITAXY; ATOMIC HYDROGEN; GROWTH MODE; LATTICE RELAXATION; SURFACTANT; MOLECULAR-BEAM EPITAXY (MBE);

D O I：

10.1143/JJAP.32.L1085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth modes and lattice relaxation processes in the heteroepitaxial growth of GaAs films on InP substrates by molecular beam epitaxy (MBE) with atomic hydrogen irradiation have been investigated for different growth temperatures. We have found that atomic hydrogen delays the onset of Island growth and lattice relaxation at a substrate temperature of 350-degrees-C because of the presence and interaction of hydrogen atoms with incoming atoms on the surface at this temperature range. At 450-degrees-C, no significant differences in the lattice relaxation process between the MBE growth with and without the atomic hydrogen irradiation were observed. This change in the growth mode is believed to be an important factor which affects the mechanism of strain relaxation.

引用

页码：L1085 / L1087

页数：3

共 13 条

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