NEW RAM-BUS MEMORY SYSTEM WITH INTERCHIP OPTICAL INTERCONNECTION

被引：4

作者：

MIYAKE, K

TANAKA, T

ETOH, T

TSUNO, M

YOKOYAMA, S

KOYANAGI, M

机构：

[1] Research Center for Integrated Systems, Hiroshima University, Higashi-Hiroshima, 724

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1B期

关键词：

GRAM-BUS MEMORY; OPTICAL INTERCONNECTION; LED; PHOTODETECTOR; MICROBONDING; OPTICAL WRITING;

D O I：

10.1143/JJAP.33.848

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new optical RAM-bus (GRAM-bus) memory system has been proposed. The GRAM-bus memory has a number of optical interconnections to connect many memory chips. Data transfer using the guided optical interconnections is performed through the optical coupling flip-flop (OC-FF) circuit of the optical coupling sense amplifiers. The ORAM-bus memory test chips were fabricated using 2 mu m complementary metal-oxide-semiconductor (CMOS) technology. The light-emitting diodes (LEDs) were successfully bonded onto the silicon test chips using the newly developed microbonding technology. The optical writing operation for GRAM-bus memory was demonstrated using the test chip.

引用

页码：848 / 851

页数：4