THE INFLUENCE OF QUANTIZATION ON THE SPACE-CHARGE LAYER CAPACITANCE OF SI IN STRONG ACCUMULATION

[1] ABRAMOVITS M, 1979, HDB MATH FUNCTIONS, pCH6

[2] BANGERT E, 1974, 12TH P INT C PHYS SE, P101

[3] EFFECT OF ELECTRIC AND MAGNETIC-FIELD ON SELF-CONSISTENT POTENTIAL AT SURFACE OF A DEGENERATE SEMICONDUCTOR [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 475 - +

[4] FRANTSUZOV AA, 1984, 8TH P M PHYS SURF 2, P113

[5] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[6] HARDALOV CM, 1984, SURFACE SCI, V147, P355

[7] JAYADEVAIAH TS, 1974, SURFACE SCI RECENT P, pCH19

[8] Many A., 1965, SEMICONDUCTOR SURFAC

[9] SATURATION CAPACITANCE OF THIN OXIDE MOS STRUCTURES AND EFFECTIVE SURFACE DENSITY OF STATES OF SILICON [J]. SOLID-STATE ELECTRONICS, 1974, 17 (04) : 335 - 339

[10] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO, V9, P96

[1] ABRAMOVITS M, 1979, HDB MATH FUNCTIONS, pCH6

[2] BANGERT E, 1974, 12TH P INT C PHYS SE, P101

[3] EFFECT OF ELECTRIC AND MAGNETIC-FIELD ON SELF-CONSISTENT POTENTIAL AT SURFACE OF A DEGENERATE SEMICONDUCTOR [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 475 - +

[4] FRANTSUZOV AA, 1984, 8TH P M PHYS SURF 2, P113

[5] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[6] HARDALOV CM, 1984, SURFACE SCI, V147, P355

[7] JAYADEVAIAH TS, 1974, SURFACE SCI RECENT P, pCH19

[8] Many A., 1965, SEMICONDUCTOR SURFAC

[9] SATURATION CAPACITANCE OF THIN OXIDE MOS STRUCTURES AND EFFECTIVE SURFACE DENSITY OF STATES OF SILICON [J]. SOLID-STATE ELECTRONICS, 1974, 17 (04) : 335 - 339

[10] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO, V9, P96