DEGENERATE ELECTRON-GAS IN TUNGSTEN BRONZES AND IN HIGHLY DOPED SILICON

被引：72

作者：

MOTT, NF ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 OHE,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE | 1977年 / 35卷 / 01期

关键词：

D O I：

10.1080/14786437708235976

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：111 / 128

页数：18

共 47 条

[1] ABELES B, 1975, ADV PHYS, V24, P407, DOI 10.1080/00018737500101431
[2] SELF-CONSISTENT THEOY OF LOCALIZATION .2. LOCALIZATION NEAR BAND EDGES
ABOUCHACRA, R
THOULESS, DJ
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (01): : 65 - 75
[3] ALLEN FR, 1973, THESIS CAMBRIDGE
[4] ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES
ANDERSON, PW
[J]. PHYSICAL REVIEW, 1958, 109 (05): : 1492 - 1505
[5] ENHANCED SPIN SUSCEPTIBILITY IN PHOSPHORUS-DOPED SILICON
BERGGREN, KF
[J]. PHILOSOPHICAL MAGAZINE, 1974, 30 (01): : 1 - 11
[6] SINGLE-PARTICLE EXCITATIONS IN MAGNETIC INSULATORS
BRINKMAN, WF
RICE, TM
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (05): : 1324 - +
[7] BROUERS F, 1975, J PHYSIQUE LETT, V36, P17
[8] Crowder B.L., 1963, J CHEM PHYS, V38, P1576, DOI [10.1063/1.1776924, DOI 10.1063/1.1776924]
[9] ELECTRONIC-STRUCTURE OF AN IMPURITY BAND - CUMULANT APPROACH
CYROTLAC.F
GASPARD, JP
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (10): : 1829 - 1839
[10] COMPENSATION DEPENDENCE OF IMPURITY CONDUCTION IN ANTIMONY-DOPED GERMANIUM
DAVIS, EA
COMPTON, WD
[J]. PHYSICAL REVIEW, 1965, 140 (6A): : 2183 - &