ON THE POSSIBILITY OF 2-DIMENSIONAL GROWTH OF GAAS ON ATOMICALLY FLAT SI(100) SURFACES

被引：14

作者：

KAXIRAS, E ^{[1
]}

JOANNOPOULOS, JD ^{[1
]}

机构：

[1] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

来源：

关键词：

D O I：

10.1016/0039-6028(89)90929-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：515 / 524

页数：10

共 19 条

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