OXYGEN-K NEAR-EDGE-STRUCTURE FOR THIN CE OXIDE-FILMS

被引:9
作者
BRAATEN, NA [1 ]
BORG, A [1 ]
GREPSTAD, JK [1 ]
RAAEN, S [1 ]
RUCKMAN, MW [1 ]
机构
[1] BROOKHAVEN NATL LAB,UPTON,NY 11973
关键词
D O I
10.1016/0038-1098(91)90778-T
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Oxygen K-edge absorption studies are performed on thin oxidized Ce films on Ta substrates. The various absorption edges are identified as belonging to trivalent or tetravalent Ce oxides by use of previous photoemission results, and by use of the O K-edge absorption spectrum from formally tetravalent CeO2, which is obtained by oxidizing a thick Ce film.
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页码:731 / 734
页数:4
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