EVIDENCE FOR THE NEGATIVE CHARGE STATE OF DX CENTERS IN ALXGA1-XAS - SI

被引：14

作者：

MOSSER, V

CONTRERAS, S

PIOTRZKOWSKI, R

LORENZINI, P

ROBERT, JL

ROCHETTE, JF

MARTY, A

机构：

[1] Schlumberger Montrouge Recherche, Montrouge

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 06期

关键词：

D O I：

10.1088/0268-1242/6/6/017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study here the thermally activated capture of electrons on Si-induced impurity states (DX centres) in Al(x)Ga(1-x)As (x = 0.28 and 0.33) after photoionization at low temperature (65-160 K) and under pressure (0-8 kbar). We show that the combination of isothermal and thermostimulated experiments under pressure permits us to state that the capture rates onto the different configurations of the DX centre related to the local environment of the donor atom in the Al(x)Ga(1-x)As alloy are not very different from each other, and to unambiguously discriminate between the cases DX0 and DX-. Our results indicate a negatively charged DX ground state.

引用

页码：505 / 509

页数：5

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