LOW-TEMPERATURE MOVPE GROWTH OF ZNSE WITH DITERTIARYBUTYLSELENIDE

被引：31

作者：

KUHN, W

NAUMOV, A

STANZL, H

BAUER, S

WOLF, K

WAGNER, HP

GEBHARDT, W

POHL, UW

KROST, A

RICHTER, W

DUMICHEN, U

THIELE, KH

机构：

[1] TECH UNIV BERLIN,INST FESTKORPERPHYS,W-1000 BERLIN 12,GERMANY

[2] TH MERSEBURG,INST ANORGAN CHEM,O-4200 MERSEBURG,GERMANY

[3] AF IOFFE PHYSICOTECH INST,ST PETERSBURG 194021,USSR

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 123卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(92)90624-R

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The results on the synthesis of the selenium alkyl ditertiarybutylselenide and its application in atmospheric pressure MOVPE are presented. In combination with dimethylzinc-triethylamine, single crystalline ZnSe layers were grown on GaAs at temperatures lower than 350-degrees-C. Good morphology, crystalline and interface quality are demonstrated by optical and electron microscopy, X-ray diffraction and Raman spectroscopy. Photoluminescence at 2 K reveals chlorine as an impurity. The electron mobility of 500 cm2/V.s at room temperature supports a fairly low compensation.

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页码：605 / 610

页数：6

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