NOISE MEASUREMENT RESULTS OF A RADIATION HARDENED CMOS 1.2-MU-M P-WELL PROCESS

被引：8

作者：

TEDJA, S ^{[1
]}

WILLIAMS, HH ^{[1
]}

VANDERSPIEGEL, J ^{[1
]}

NEWCOMER, FM ^{[1
]}

VANBERG, R ^{[1
]}

机构：

[1] UNIV PENN,DEPT PHYS,PHILADELPHIA,PA 19104

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1992年 / 312卷 / 03期

关键词：

D O I：

10.1016/0168-9002(92)90207-K

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Noise performance of transistors fabricated in a radiation hardened CMOS 1.2-mu-m P-well process was measured using a multi-channel analyzer. The measured noise is presented in terms of equivalent noise charge (ENC) referred to the input of the device under test as a function of total input capacitances for various transistor width-over-length (W/L) ratios, channel lengths (from 1.2-mu-m to 3.2-mu-m), drain currents, and impulse response peaking times. A fitting program was used to extract the drain thermal noise and the flicker (1/f) noise contributions from the noise data.

引用

页码：576 / 584

页数：9