MODULATION DOPING AND OBSERVATION OF THE INTEGRAL QUANTUM HALL-EFFECT IN PBTE/PB1-XEUXTE MULTIQUANTUM WELLS

被引：38

作者：

SPRINGHOLZ, G ^{[1
]}

IHNINGER, G ^{[1
]}

BAUER, G ^{[1
]}

OLVER, MM ^{[1
]}

PASTALAN, JZ ^{[1
]}

ROMAINE, S ^{[1
]}

GOLDBERG, BB ^{[1
]}

机构：

[1] BOSTON UNIV,DEPT PHYS,BOSTON,MA 02215

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 21期

关键词：

D O I：

10.1063/1.110269

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In Pb1-xEuxTe layers grown by molecular beam epitaxy a drastic reduction of electron mobility is observed for increasing Eu content. This is exploited for the investigation of the electronic properties of the two-dimensional electron gas in PbTe/Pb1-xEuxTe quantum wells (x=4.7%). In such structures we report the observation of the integer quantum Hall effect with a dominance of the odd filling factors due to the large spin splitting in the lead salts.

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页码：2908 / 2910

页数：3

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