OPTICAL-TRANSITIONS FROM BOUND TO EXTENDED STATES IN A SINGLE-QUANTUM-WELL WITH SYMMETRICAL BARRIERS

被引:8
作者
RU, GP
LI, AZ
机构
[1] Department of Semiconductor Materials, Shanghai Institute of Metallurgy, Chinese Academy of Sciences
关键词
D O I
10.1006/spmi.1993.1058
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Formulas for the optical transition matrix element and absorption coefficient from a bound to exetended states in a single quantum well (SQW) are derived. The model is applied to a GaAlAs/GaAs single quantum well. The results show that the transition matrix element varies slowly over a wide energy range. Both narrow and broad absorption spectra are obtained. The peak absorption wavelength shifts to low energy as the well narrows. The results also show that the peak absorption coefficient is very sensitive to the well width when the well width approaches the critical value corresponding to the first excited state being located just at the top of the well. © 1993 Academic Press.
引用
收藏
页码:289 / 292
页数:4
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