CONTROL OF RESISTIVITY, MICROSTRUCTURE, AND STRESS IN ELECTRON-BEAM EVAPORATED TUNGSTEN FILMS

被引：44

作者：

SINHA, AK ^{[1
]}

SMITH, TE ^{[1
]}

SHENG, TT ^{[1
]}

AXELROD, NN ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1973年 / 10卷 / 03期

关键词：

D O I：

10.1116/1.1317085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An experimental study is made of the use of the electron beam evaporation technique for obtaining relatively pure tungsten films suitable for gate material in refractory metal-oxide-semiconductor devices. Films produced had a resistivity of 7-8 mu ohm-cm when deposited on substrates at 500-700 C. Such films have small grain size, small tensile stress and high microstructural perfection. Films deposited at lower temperatures had resistivities of 10-15 mu ohm-cm.

引用

页码：436 / 444

页数：9

共 19 条

[1] AXELROD NN, UNPUBLISHED
[2] TEMPERATURE COEFFICIENTS OF RESISTANCE OF METALLIC FILMS IN THE TEMPERATURE RANGE 25-DEGREES-C TO 600-DEGREES-C
BELSER, RB
HICKLIN, WH
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (03) : 313 - 322
[3] BLATT FJ, 1968, PHYSICS ELECTRONIC C
[4] BROJDO S, UNPUBLISHED
[5] REFRACTORY METAL SILICON DEVICE TECHNOLOGY
BROWN, DM
ENGELER, WE
GARFINKEL, M
GRAY, PV
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (12) : 1105 - +
[6] CAFFREY RE, 1971, BELL LAB REC, V49, P38
[7] CHOPRA KL, 1969, THIN FILM PHONOMENA
[8] EFFECTS OF ANNEALING ON THIN GOLD FILMS
KANE, WM
SPRATT, JP
HERSHING.LW
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 2085 - &
[9] KUSHNER RA, PRIVATE COMMUNICATIO
[10] Maissel L.I., 1970, HDB THIN FILM TECHNO

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