GROWTH-MECHANISM OF STAR-SHAPED TIN CRYSTALS

被引:17
作者
CHENG, HE
HON, MH
机构
[1] Department of Materials Science and Engineering, National Cheng Kung University, Tainan
关键词
D O I
10.1016/0022-0248(94)90277-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Star-shaped TiN crystals obtained by chemical vapor deposition with TiCl4, N2 and H-2 as gas source at ambient pressure have been examined by electron microscopy. The structure was found to be similar to the fivefold multiply-twinned particle at the core and the inherent 7.5-degrees mismatch is shared by the five tetrahedra. The five extrusion arms of the star-shaped TiN crystals are the result of preferred growth at the five (111) twin boundaries, and the growth rate of these crystals is higher than that of the crystals of other shape. A possible mechanism has been proposed to explain the growth which avoids the internal strain and results in quick growth of these star-shaped crystals.
引用
收藏
页码:117 / 123
页数:7
相关论文
共 11 条
[1]   STRUCTURE OF SMALL, VAPOR-DEPOSITED PARTICLES .1. EXPERIMENTAL-STUDY OF SINGLE-CRYSTALS AND PARTICLES WITH PENTAGONAL PROFILES [J].
HEINEMANN, K ;
YACAMAN, MJ ;
YANG, CY ;
POPPA, H .
JOURNAL OF CRYSTAL GROWTH, 1979, 47 (02) :177-186
[2]   ELASTIC STRAINS AND THE ENERGY-BALANCE FOR MULTIPLY TWINNED PARTICLES [J].
HOWIE, A ;
MARKS, LD .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1984, 49 (01) :95-109
[3]   FINE PARTICLES OF SILICON .2. DECAHEDRAL MULTIPLY-TWINNED PARTICLES [J].
IIJIMA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (03) :365-372
[6]   ELECTRON-MICROSCOPIC OBSERVATION OF DIAMOND PARTICLES GROWN FROM THE VAPOR-PHASE [J].
MATSUMOTO, S ;
MATSUI, Y .
JOURNAL OF MATERIALS SCIENCE, 1983, 18 (06) :1785-1793
[8]   ON EPITAXIAL-GROWTH OF DIAMOND FILMS ON (100) SILICON SUBSTRATES [J].
NARAYAN, J ;
SRIVATSA, AR ;
PETERS, M ;
YOKOTA, S ;
RAVI, KV .
APPLIED PHYSICS LETTERS, 1988, 53 (19) :1823-1825
[9]   CRYSTAL-STRUCTURE AND HABIT OF SILICON AND GERMANIUM PARTICLES GROWN IN ARGON GAS [J].
SAITO, Y .
JOURNAL OF CRYSTAL GROWTH, 1979, 47 (01) :61-72
[10]   ELECTRON-MICROSCOPY OF VAPOR-PHASE DEPOSITED DIAMOND [J].
WILLIAMS, BE ;
KONG, HS ;
GLASS, JT .
JOURNAL OF MATERIALS RESEARCH, 1990, 5 (04) :801-810