CONCENTRATION PROFILES OF BORON IMPLANTATIONS IN AMORPHOUS AND POLYCRYSTALLINE SILICON

Boron was implanted in amorphous silicon at energies in the range 30-200 keV and in polycrystalline silicon at energies in the range 70-800 keV. The boron distributions were measured with secondary ion mass spectrometry. By comparing the boron distributions in amorphous silicon and in polycrystalline silicon it was found that the used polycrystalline silicon behaves similarly to amorphous silicon for the boron stopping process.